The SOI wafers needed to be heated to temperatures from 600C to 1200C in a vacuum or controlled atmosphere.
Mobile Heat Source
The ZMR process required that a line of heat be passed across the top of SOI wafer.
Poor Quality
Existing method of heating the SOI wafers with a laser or heated wire did not always produce quality junctions on the wafer surface.
Solution
Heat
A Model 5194 Infrared Line Heater installed on a traversing mechanism was used to move heat across the top of the SOI wafer. Model 5209 High Density Infrared Heaters applied heat to the bottom of the SOI wafer.
Power Control
A Model 664F Phase Angle SCR Power Controller controlled the power to the Infrared Line Heater and a Model 664F Phase Angle SCR Power Controller controlled the power to the High Density Heaters.
Benefits
Temperatures Achieved
The combination of top and bottom heating enabled the research laboratory to achieve required temperatures.
Improved Quality
The heating process consistently produced quality junctions of the wafer surface.
Precise Temperature Adjustment
The SCR Power Controllers enabled the research laboratory to precisely adjust the heat applied to the wafers.
