ApplicationsHeat SOI Wafer
Application:
A research laboratory manufacturing SOI wafers via zone melting recrystallization (ZMR).
Problem:
- Temperature Requirement - The SOI wafers needed to be heated to temperatures from 600C to 1200C in a vacuum or controlled atmosphere.
- Mobile Heat Source - The ZMR process required that a line of heat be passed across the top of SOI wafer.
- Poor Quality - Existing method of heating the SOI wafers with a laser or heated wire did not always produce quality junctions on the wafer surface.
Solution:
- Heat - A Model 5194 Infrared Line Heater installed on a traversing mechanism was used to move heat across the top of the SOI wafer. Model 5209 High Density Infrared Heaters applied heat to the bottom of the SOI wafer.
- Power Control - A Model 664F Phase Angle SCR Power Controller controlled the power to the Infrared Line Heater and a Model 664F Phase Angle SCR Power Controller controlled the power to the High Density Heaters.
Benefits:
- Temperatures Achieved - The combination of top and bottom heating enabled the research laboratory to achieve required temperatures.
- Improved Quality - The heating process consistently produced quality junctions of the wafer surface.
- Precise Temperature Adjustment - The SCR Power Controllers enabled the research laboratory to precisely adjust the heat applied to the wafers.